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 Features
* * * * * *
35 dBm Output Power in CW Mode High Power Added Efficiency (PAE) Single Supply Operation (No Negative Rail) Simple Analog Power Ramp Control Low Current Consumption in Power-down Mode (Typically 15 mA) Small SMD Package (PSSOP28 with Heat Slug)
Applications
* * * *
Professional Phones Hands-free Sets ISM Band Application Wireless Infrastructure Pre-amplifiers
Description
The ATR0906 is a monolithic integrated power amplifier IC manufactured with Atmel's Silicon-Germanium (SiGe) process. Due to its open architecture it can be used either as a two or three-stage amplifier. Every stage can be matched individually which allows applications in a wide frequency range. The ATR0906 can be used from 600 MHz up to 1 GHz in both linear and non-linear (saturated) mode. The analog control input sets dynamically the power gain (either for every single stage or the entire power amplifier).Constant gain mode is also possible. The ATR0906 is suited for the CW mode up to 35 dBm. All these features, including wide power ramp control, makes the ATR0906 a very flexible power amplifier serving many different applications. In addition to phones, the application range includes car identification systems and various wireless communication systems. The single supply voltage operation at +3.5 V and a negligible leakage current in power-down mode allow to significantly simplify the power management of the application. Figure 1. Block Diagram
Vctl1
Generalpurpose VHF/UHF Power Amplifier (600 - 1000 MHz) ATR0906 Preliminary
13
Gain1 16
Vctl2
14
Gain2 17
Vctl3 Gain3 15 18 19 Vbias3
BGout Vctl Vcc_ctl
11 12 10
BG
Buf1
Buf2
Buf3
9 8 20
Vbias2 Vb2_dc Vb3_dc RFout/Vcc3
7 RFin1 21 GND3
22-25
Match RF1 Match RF2 Match RF3
5 4 6 GND1 Vcc1 RFin2
28 Vcc2
26 GND3
Rev. 4785B-SIGE-05/04
Pin Configuration
Figure 2. Pinning SSOP28
NC NC NC RFin2 Vcc1 GND1 RFin1 Vb2_dc Vbias2 Vcc_ctl BGout Vctl Vctl1 Vctl2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 Vcc2 NC GND3 RFout/Vcc3 RFout/Vcc3 RFout/Vcc3 RFout/Vcc3 GND3 Vb3_dc Vbias3 Gain3 Gain2 Gain1 Vctl3
Pin Description
Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 Note: Symbol NC NC NC RFin2 Vcc1 GND1 RFin1 Vb2_dc Vbias2 Vcc_ctl BGout Vctl Vctl1 Vctl2 Vctl3 Gain1 Gain2 Gain3 Vbias3 Vb3_dc GND3(1) RFout/Vcc3 RFout/Vcc3 RFout/Vcc3 RFout/Vcc3 GND3 NC Vcc2
(1)
Function Not connected Not connected Not connected RF input (two-stage operation) Supply voltage (first stage) Ground RF input (three-stage operation) Input for gain setting (second stage) Output Buf2 Supply voltage control block Output band gap Control voltage input Control voltage input (first stage) Control voltage input (second stage) Control voltage input (third stage) Gain setting Buf1 Gain setting Buf2 Gain setting Buf3 Output Buf3 Input for gain setting (third stage) Ground RF output/supply voltage (third stage) RF output/supply voltage (third stage) RF output/supply voltage (third stage) RF output/supply voltage (third stage) Ground Not connected Supply voltage (second stage)
1. GND2 and GND3 are internally connected and both are connected to the down-set paddle
2
ATR0906 [Preliminary]
4785B-SIGE-05/04
ATR0906 [Preliminary]
Absolute Maximum Ratings
Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Parameters Supply voltage VCC, no RF Input power Gain control voltage
(1)
Symbol VCC1, VCC2, VCC3 PRFin Vctl Tc Tstg PRFout
Value 0 to +5.5 10 0 to +2.5 -40 to +100 -40 to +150 36
Unit V dBm V C C dBm
Operating case temperature Storage temperature Maximum output power Note:
1. The part may not survive all maximums applied simultaneously.
Thermal Resistance
Parameters Junction case Symbol RthJC Value 19 Unit K/W
Operating Range
Parameters Supply voltage Ambient temperature Input frequency Symbol VCC Tamb fRFin Value 2.7 to 5.0 -40 to +85 600 to 1000 Unit V C MHz
Electrical Characteristics
Test conditions (if not otherwise specified): VCC = +3.5 V, Tamb = +25 C, 50 input and 50 output match No. 1 1.1 2 2.1 2.2 Parameters Power Supply Current consumption, power-down mode (leakage current) Frequency range Output power, normal conditions VCC = 3.5 V Tamb = +25 C PRFin = 3 dBm RL = RG = 50 VCC = 2.4 V Tamb = +85 C PRFin = 3 dBm RL = RG = 50 22-25 Vctl 0.2 V 10, 22-25, 28 I 15 25 A A Test Conditions Pin Symbol Min. Typ. Max. Unit Type*
750 MHz Amplifier Mode fRFin750 PRFout750 700 34 35.0 800 MHz dBm C
2.3 2.4 2.5
Extreme conditions Input power Power added efficiency
22-25 7
PRFout750 PRFin750 PAE750
32
33.0 3 10
dBm dBm %
VCC = 3.5 V PRFout = 35.0 dBm
10, 22-25, 28
45
50
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
3
4785B-SIGE-05/04
Electrical Characteristics (Continued)
Test conditions (if not otherwise specified): VCC = +3.5 V, Tamb = +25 C, 50 input and 50 output match No. 2.6 2.7 2.8 2.9 2.10 2.11 2.12 3 3.1 3.2 Parameters Current consumption, active mode Input VSWR Stability/load mismatch 2nd harmonic distortion 3rd harmonic distortion 4th to 8th harmonic distortion Isolation between input and output PRFin750 = 8 dBm Vctl 0.2 V (power down) Test Conditions PRFout = 35.0 dBm PRFin = 0 to 8 dBm PRFout = 31.0 dBm PRFout = 31.0 dBm VCC = 4.6 V Pin 10, 22-25, 28 7 22-25 22-25 22-25 22-25 7, 22-25 Symbol I750 VSWR750 VSWR750 2fo750 3fo750 4fo750 to 8fo750 PRFout750 Min. Typ. 1.81 2:1 8:1 -35 -35 -35 -30 dBc dBc dBc dBm Max. Unit A Type*
830 MHz Amplifier Mode Frequency range Output power, normal conditions VCC = 3.5 V Tamb = +25 C PRFin = 3 dBm RL = RG = 50 VCC = 2.4 V Tamb = +85 C PRFin = 3 dBm RL = RG = 50 22-25 fRFin830 PRFout830 776 34 35.0 870 MHz dBm C A
3.3 3.4 3.5
Extreme conditions Input power Power added efficiency Current consumption, active mode Input VSWR Stability/load mismatch 2nd harmonic distortion 3rd harmonic distortion 4th to 8th harmonic distortion Isolation between input and output
22-25 7
PRFout830 PRFin830 PAE830
31.5
32.5 3 10
dBm dBm %
C A A
VCC = 3.5 V PRFout = 35.0 dBm PRFout = 35.0 dBm PRFin = 0 to 8 dBm PRFout = 31.0 dBm PRFout = 31.0 dBm VCC = 4.6 V
10, 22-25, 28 10, 22-25, 28 7 22-25 22-25 22-25 22-25
43
48
3.6 3.7 3.8 3.9 3.10 3.11 3.12
I830 VSWR830 VSWR830 2fo830 3fo830 4fo830 to 8fo830 PRFout830
1.88 2:1 8:1 -35 -35 -35 -30
A
A C C
dBc dBc dBc dBm
A A A A
PRFin830 = 8 dBm Vctl 0.2 V (power down)
7, 22-25
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
4
ATR0906 [Preliminary]
4785B-SIGE-05/04
ATR0906 [Preliminary]
Electrical Characteristics (Continued)
Test conditions (if not otherwise specified): VCC = +3.5 V, Tamb = +25 C, 50 input and 50 output match No. 4. 4.1 4.2 Parameters Frequency range Output power, normal conditions VCC = 3.5 V Tamb = +25 C PRFin = 3 dBm RL = RG = 50 VCC = 2.4 V Tamb = +85 C PRFin = 3 dBm RL = RG = 50 22-25 Test Conditions Pin Symbol fRFin940 PRFout940 Min. 776 33 34.0 Typ. Max. 870 Unit MHz dBm Type* C C 940 MHz Amplifier Mode
4.3 4.4 4.5
Extreme conditions Input power Power added efficiency Current consumption, active mode Input VSWR Stability/load mismatch 2nd harmonic distortion 3rd harmonic distortion 4 to 8 harmonic distortion Isolation between input and output Power Control Control curve slope Power control range Control voltage range Control current
th th
22-25 7
PRFout940 PRFin940 PAE940
29
30.0 3 10
dBm dBm %
C C C
VCC = 3.5 V PRFout = 34.0 dBm PRFfout = 34.0 dBm PRFin = 0 to 8 dBm PRFout = 31.0 dBm PRFout = 31.0 dBm VCC = 4.6 V
10, 22-25, 28 10, 22-25, 28 7 22-25 22-25 22-25 22-25
41
46
4.6 4.7 4.8 4.9 4.10 4.11 4.12 5 5.1 5.2 5.3 5.4
I940 VSWR940 VSWR940 2fo940 3fo940 4fo940 to 8fo940 PRFout940
1.56 2:1 8:1 -35 -35 -35 -30
A
C C C
dBc dBc dBc dBm
C C C C
PRFin940 = 8 dBm Vctl 0.2 V (power down) PRFout 5 dBm PRFout 25 dBm Vctl = 0 to 2.5 V PRFin = 0 to 8 dBm Vctl = 0 to 2.5 V
7, 22-25
22-25 22-25 12-14 12-14
Sctl Gctl Vctl Ictl 60 0.5
300 120
350 150 2.0 200
dB/V dB/V dB V A
C C C A
*) Type means: A = 100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
5
4785B-SIGE-05/04
Application Example
Figure 3. Application Example for 830 MHz with Variable Gain
Vctl R3 Vctl1 13 Gain1 Vctl2 16 14 R7 Gain2 17 R11 Vctl3 15 C22 Gain3 18 19 BGout 11 C4 Buf1 Vctl 12 BG Buf2 Buf 3 9 8 20 7
Match
Vbias3
C6
R14
Vbias2 Vb2_dc Vb3_dc MS3 RFout/ Vcc3 L3 R1 C1 MS4 C7 L8 MS5 C21 C8 RFout C25 L2
Vcc_ctl C18 RFin MS7 L4
C5 Vcc_ctl 10 C3 L9 MS6 RFin1 21 GND3
RF1 5
Match
RF2
22-25
Match
RF3 26 GND3
6 GND1
4
28 Vcc2
RFin2 Vcc1
MS8
MS1 MS9
L12 C26
MS2
L5
C20
L7
C14
C19
L10
C11
L11 C10
C17
C12 C16
C13
C9
C15
Vcc1
Vcc2
Vcc3
6
ATR0906 [Preliminary]
4785B-SIGE-05/04
ATR0906 [Preliminary]
Recommended Package Footprint
Figure 4. Extract from the PCB Showing a Part of the Core Application (without Components)
Notes:
1. Only ground signal traces are recommended directly under the package. 2. The greatest possible density of ground vias guarantees an optimum connection of the ground layers and the best diversion of the heat. 3. The heat slug must be soldered to GND. 4. Plugging of the ground via under the heat slug is also recommended to avoid soldering problems.
7
4785B-SIGE-05/04
Ordering Information
Extended Type Number ATR0906-TSPH Package PSSOP28 Remarks Lead free
Package Information
Package PSSOP28
Dimensions in mm
9.98 9.80 1.60 1.45 0.25 0.64 8.32 28 15 0.10 0.00 3.91 6.02
0.2
2.21 1.80
technical drawings according to DIN specifications
1
7.29 6.88
14
8
ATR0906 [Preliminary]
4785B-SIGE-05/04
Atmel Corporation
2325 Orchard Parkway San Jose, CA 95131, USA Tel: 1(408) 441-0311 Fax: 1(408) 487-2600
Atmel Operations
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Regional Headquarters
Europe
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Japan
9F, Tonetsu Shinkawa Bldg. 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan Tel: (81) 3-3523-3551 Fax: (81) 3-3523-7581
Literature Requests
www.atmel.com/literature
Disclaimer: Atmel Corporation makes no warranty for the use of its products, other than those expressly contained in the Company's standard warranty which is detailed in Atmel's Terms and Conditions located on the Company's web site. The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual property of Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel's products are not authorized for use as critical components in life support devices or systems.
(c) Atmel Corporation 2004. All rights reserved. Atmel (R) and combinations thereof are the registered trademarks of Atmel Corporation or its subsidiaries. Other terms and product names may be the trademarks of others. Printed on recycled paper.
4785B-SIGE-05/04


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